Structure and Morphology of Si3N4 Powders Prepared by Carbon Thermal Reduction and Nitriding Method with Silicic Acid Gel
摘 要
以水玻璃为硅源, 炭黑为碳源, 利用碳热还原氮化法制备了Si3N4粉体, 研究了氮化温度、氮化时间和碳硅物质的量比对产物结构的影响, 并对其形貌进行了观察。结果表明: 氮化温度高于1 400 ℃时, 产物全部为Si3N4; 氮化时间大于5 h时, 可以得到较纯的α-Si3N4; 碳硅物质的量比为3∶1时, 产物全部为Si3N4; 碳硅物质的量比为4∶1的前躯体在1 400 ℃氮化5 h后得到的Si3N4粉体为不规则的、分散性良好的颗粒, 颗粒尺寸为0.3~1 μm; 碳硅物质的量比为3∶1的前躯体在1 450 ℃氮化5 h后得到的Si3N4粉体分散性良好, 具有规则锤状形态。
Abstract
Taking sodium silicate as silicon source and carbon black as carbon source, the Si3N4 powders were prepared by carbon thermal reduction and nitriding method, and the effects of nitriding temperature, nitriding time and mole ratio of carbon to silicon on structure were studied, and the morphology was observed. The results show that all products were Si3N4 when nitriding temperature was over 1 400 ℃, the fairly pure α-Si3N4 could be obtained when nitriding time was more than 5 h, and all products were Si3N4 when the mole ratio of carbon to silicon was 3∶1. The Si3N4 powders prepared by nitriding the precursor with mole ratio of carbon to silicon of 4∶1 at 1 400 ℃ for 5 h had irregular particles and good dispersity, the particles size was 0.3-1 μm, and the Si3N4 powders prepared by nitriding the precursor with mole ratio of carbon to silicon of 3∶1 at 1 450 ℃ for 5 h had good dispersity and appeared regular hammer-like.
中图分类号 TQ127.2
所属栏目 试验研究
基金项目 高等学校博士学科点专项科研基金资助项目(20090111110007)
收稿日期 2011/9/6
修改稿日期 2012/5/4
网络出版日期
作者单位点击查看
备注姜坤(1983-), 男, 安徽阜阳人, 硕士研究生。
引用该论文: JIANG Kun,ZHENG Zhi-xiang,ZHU Wen-zhen,L Jun,XU Guang-qing. Structure and Morphology of Si3N4 Powders Prepared by Carbon Thermal Reduction and Nitriding Method with Silicic Acid Gel[J]. Materials for mechancial engineering, 2012, 36(9): 30~33
姜坤,郑治祥,朱文振,吕珺,徐光青. 硅酸凝胶碳热还原氮化法制备氮化硅粉体的结构及形貌[J]. 机械工程材料, 2012, 36(9): 30~33
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【6】ANDRZEJ P, BEATA S, GRZEGORZ W. Preparati on of silicon nitride powder from silica and mmonia[J].Ceramics International, 2002, 28: 495-501.
【7】TRABADELO V, GIMENEZ S. Development of powder metallurgy T42 high speed steel for structural applications[J].Journal of Materials Processing Technology, 2008, 202(1/3): 521-527.
【8】GUNDIAH G, MADHAV G V, GOVINDARAJ A, et al.Synthesis and characterization of silicon carbide, silicon oxynitride and silicon nitride nanowires[J].Mater Chem, 2002, 12: 1606-1611.
【9】ORTEGA A, ALCALA M D, REAL C. Carbothermal synthesis of silicon nitride(Si3N4): kinetics and diffusion mechanism[J]. Journal of Materials Processing Technology, 2008, 195: 224-231.
【10】MAMORU O. Sintering, consolidation, reaction and crystalgrowth by the spark plasma system (SPS)[J].Materials Science and Engineering A, 2000, 287: 183-188.
【11】刘学建, 金承钮, 黄智勇, 等. 工艺因素对低压化学气相沉积氮化硅薄膜的影响[J].硅酸盐学报, 2003, 31(10) : 987-990.
【12】高纪明, 肖汉宁, 杜海清. 纳米Si3N4-SiC(Y2O3)复合粉末的氨解溶胶-凝胶法合成[J].硅酸盐学报, 1998, 26(5): 587-591.
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【16】王峰, 郝雅娟, 靳国强, 等.氮化硅纳米线制备过程中反应条件的影响[J].物理化学学报, 2007, 23(10): 1503-1507.
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