脆性材料截面透射电镜样品的制备
Preparation for Cross-sectional TEM Specimens for Brittle Materials
摘 要
针对脆性材料截面透射电镜样品制样难的问题, 详细介绍一种改进的离子减薄法制备脆性材料截面TEM样品的方法, 即先制备层叠矩形薄片, 然后使用低速锯切取出层叠薄片, 再用切割工具切割出3 mm的圆片, 最后采用凹坑研磨和抛光及离子减薄法完成样品的制备。大量操作试验证明该方法具有成本低、操作方便等优点, 提高了截面TEM样品的制样成功率; 采用该方法可快速制备硅基底上生长的薄膜层的TEM样品, 然后用TEM可清晰观察到薄膜层的生长情况。
截面样品
制样
离子减薄
transmission electron microscopy
cross-sectional specimen
specimen preparation
ion milling
Abstract
Aiming at solving the problem that it was difficult to prepare cross-sectional transmission electron microscope (TEM) specimens for brittle materials, an improved ion milling method for preparing TEM specimens was detailed described. First preparing stacked rectangular sheet, secondly cutting stacked rectangular sheet with low speed diamond wheel saw to get thin stacked sheet, thirdly cutting out the wafer of 3 mm, and finally grinding, dimpling, polishing and ion milling to complete the specimens preparation. According to a large number of preparing test, it was confirmed that this method had advantage of low cost, being easy to operate and improving the preparation success rate. By using this method it could quickly succeed in preparing thin film samples grown on Si substrate, and clearly observed the growth situation of the film layers in TEM.
中图分类号 O657.99
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收稿日期 2010/9/29
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备注王燕飞(1985-),女,硕士研究生。
引用该论文: WANG Yan-fei,HUANG Wan-zhen,ZHENG Yi-fan,HU Xian-chao,SU Wei-tao,YANG Qian. Preparation for Cross-sectional TEM Specimens for Brittle Materials[J]. Physical Testing and Chemical Analysis part A:Physical Testing, 2011, 47(4): 225～228
王燕飞,黄宛真,郑遗凡,胡仙超,苏伟涛,杨倩. 脆性材料截面透射电镜样品的制备[J]. 理化检验－物理分册, 2011, 47(4): 225～228
被引情况:
【1】杨倩,黄宛真,郑遗凡,胡仙超,王燕飞, "一种制备透射电镜截面样品的新方法",理化检验－物理分册 48, 91-94(2012)
【2】尚海龙,戴嘉维,马冰洋,张安明,廉政,李荣斌,李戈扬, "一种高成功率的薄膜截面TEM样品制备方法",理化检验－物理分册 51, 256-258(2015)
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参考文献
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【2】MANSO SILVAN M,LANGLET M,HERRERO P,et al. Preparation of interfaces for TEM cross-section observation[J]. Beam Interactions with Materials and Atoms,2007,257:623-626.
【3】ZHANG Hong. What limits the application of TEM in the semiconductor industry[J]. Thin Solid Films,1998,320:77-85.
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【8】GIANNUZZIA L A,STEVIE F A. A review of focused ion beam milling techniques for TEM specimen preparation[J]. Micron,1999,30:197-204.
【2】MANSO SILVAN M,LANGLET M,HERRERO P,et al. Preparation of interfaces for TEM cross-section observation[J]. Beam Interactions with Materials and Atoms,2007,257:623-626.
【3】ZHANG Hong. What limits the application of TEM in the semiconductor industry[J]. Thin Solid Films,1998,320:77-85.
【4】陈春焕,任瑞铭,宋明晖,等. 表面纳米化材料横截面透射电镜试样的制备[J]. 理化检验-物理分册,2009,45(11):680-683.
【5】董桂芳,张克潜. 液态金属离子源聚焦离子束系统在微米纳米技术中的应用[J]. 电子学报,1996,27(6):110-114.
【6】唐雷钧,谢进. 聚焦离子束(FIB)的透射电镜制样[J]. 电子显微学报,2000,19(4):513-514.
【7】RICHARD M,LANGFORD. Focused ion beams techniques for nanomaterials characterization[J]. Microscopy Research and Technique,2006,69:538-549.
【8】GIANNUZZIA L A,STEVIE F A. A review of focused ion beam milling techniques for TEM specimen preparation[J]. Micron,1999,30:197-204.
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