对某锁厂生产的钥匙片,优化了硝酸体系和过氧化氢体系两种抛光体系的化学抛光工艺配方,讨论了各种因素对抛光效果的影响和作用机理,并总结了两种抛光体系各自的优缺点.对于硝酸体系和过氧化氢体系,试验确定的最佳工艺配方分别为:HNO3 16%(体积分数下同),H3PO4 50%,H2SO4 34%,CrO3 10 g/L,温度100～140 ℃,时间 4 min.和H2O2 130 ml/L,草酸 75 g/L,尿素 20 g/L,H2SO4 3 ml/L,甘油 2 ml/L,温度为室温,时间 3～6 min.

The chemical polishing baths of nitric acid-based solution and hydrogen peroxide-based solution were optimized.The polishing affecting factors and their reaction mechanisms are discussed.And the advantages and disadvantages of the two chemical polishing systems are summarized.For nitric acid system,the best polishing effect could be gained under conditions of 100～140 ℃,4 min,HNO3 16%,H3PO4 50%,H2SO4 34% and CrO3 10g/L.For hydrogen peroxide system,the best polishing effect could be gained under conditions of room temperature,3~6 min,H2O2 130 ml/L,oxalic acid 75 g/L,carbamide 20 g/L,H2SO4 3 ml/L and glycerin 2 ml/L.