Semiconductor Characters of Passive Film on AISI304 Stainless Steel Surface in Electrolytes during Corrosion Process
摘 要
应用电位-电容测试和Mott-Schottky分析技术研究了AISI304不锈钢钝化膜在电解质溶液中的半导体性质.结果表明,不锈钢钝化膜在氢氧化钠溶液中,随着浸泡时间延长,半导体类型转变电位发生负移:在硫酸、硫酸钠两种溶液中转变电位无明显变化.随着腐蚀时间的延长,溶液中不锈钢钝化膜的载流子密度逐渐增加,其载流子密度在几种溶液中从小到大的顺序依次为硫酸钠,氢氧化钠,硫酸.不锈钢在三种溶液中的Mott-Schottky曲线均出现频率分化,其原因可能为钝化膜中载流子的产生-复合存在时间效应;在氢氧化钠溶液中,钝化膜腐蚀的主要原因为富铬层导电能力增强:在硫酸、硫酸钠两种溶液中,钝化膜腐蚀的主要原因为富铁层导电能力的增强.
Abstract
The semiconductor characters of AISI304 stainless steel′s passive film during corrosion process in three typical electrolytes were investigated by using potential-capacitance measurement and Mott-Schottky analysis.Passive film on the surface of the stainless steel was constructed from two different types of semiconductor film in electrolytes under study.In sodium hydroxide,the semiconductor-type-transition potential had an obvious negative drifting,while in the other two electrolytes,the transition potential had no obvious change with immersion time.Charge carrier density in the passive film increased with immersion time.The charge carrier density at 1000Hz in these three solutions could be listed in an ascending order of sodium sulfate,sodium hydroxide and sulfuric acid.Frequency dependence,appeared in all Mott-Schottky plots of AISI304 stainless steel's passive film,could be attributed to the time effect in generation-recombination process of charge carriers.The main cause of passive film's corrosion on the stainless steel surface in sodium hydroxide solution was the rising conductibility of chromium-rich layer,while in the other two solutions it was due to the ascending conductance of iron-rich layer.
中图分类号 TG172.6
所属栏目 试验研究
基金项目 国家自然科学基金(Grant No.50571059,50615024),2007教育部新世纪优秀人才支持计划项目(NCET-07-0536),教育部创新团队IRT0739项目资助.
收稿日期 2008/10/11
修改稿日期 2008/11/26
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引用该论文: WANG Chao,ZHI Yu-ming,SHENG Min-qi,ZHONG Qing-dong,CHOU Kuo-chih,LU Xiong-gang,CHU Yu-Liang. Semiconductor Characters of Passive Film on AISI304 Stainless Steel Surface in Electrolytes during Corrosion Process[J]. Corrosion & Protection, 2009, 30(6): 369~372
被引情况:
【1】马荣耀,李谋成,沈嘉年, "冷凝液pH对消声器用409不锈钢腐蚀行为的影响",腐蚀与防护 36, 448-452(2015)
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【3】林玉华,杜荣归,胡融刚,等.不锈钢钝化膜耐蚀性与半导体特性的关联研究[J].物理化学学报,2005,21(7):740-745.
【4】钟庆东,王艳珍,李红蕊,等.RTV涂膜在电解质液膜下的半导体转变现象[J].高电压技术,2007,33(12):85-90.
【5】王保成,朱金华.超声空化下不锈钢钝化膜的半导行为[J].金属学报,2007,43(8):813-817.
【6】李楠,李瑛,王胜刚,等.轧制纳米块体304不锈钢腐蚀行为的研究[J].钝化膜耐氯离子侵蚀能力,中国腐蚀与防护学报,2007,27(2):80-83.
【7】葛红花,周国定,吴文权.硼酸-硼砂介质中硫离子对不锈钢钝化膜的侵蚀性[J].腐蚀科学与防护技术,2004,16(4):211-214.
【8】Peterson M W,Parkinson B A.Photoelectrochemical investigation of several II-IV-V//2 semiconducting glasses[J].J Electrochem Soc,1986,133(12):2538-2541.
【9】Sánchez M,Gregori J,Alonso M C,et al.Anodic growth of passive layers on steel rebars in an alkaline medium simulating the concrete pores[J].Electrochim,Acta,2006,52(1):47-53.
【10】Hamadou L,Kadri A,Benbrahim N.Characterisation of passive films formed on low carbon steel in borate buffer solution (pH 9.2) by electrochemical impedance spectroscopy[J].Appl Surf Sci,2005,52(5):1510-1519.
【11】Sikora J,Sikora E,Macdonald D D.The electronic structure of the passive film on tungsten[J].Electrochim Acta,2000,45(12):1875-1883.
【12】Dean M H,Stimming U.The electronic properties of disordered passive films[J].Corros Sci,1989;29(2/3):199-211.
【13】Dean M H,Stimming U J.Capacity of semiconductor electrodes with multiple bulk electronic states 2 Applications to amorphous semiconductor electrodes[J].J Phys Chem,1989,93(24):8053-8059.
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