热压烧结碳化硅陶瓷的氧化性能
Oxidation Resistance Analysis of Silicon Carbide Sintered by Hot-pressing
摘 要
采用硅作为烧结助剂热压烧结SiC陶瓷,用扫描电镜、X射线衍射仪和热重分析仪研究了不同状态SiC陶瓷的氧化性能.结果表明：未预处理SiC在等温氧化过程中,600～1 100 ℃区间内,等温氧化动力学曲线服从抛物线规律;而在1 100～1 300 ℃区间,则偏离了抛物线规律,氧化速率随温度的升高先增大后减小.经过高温预氧化处理之后,SiC试样在等温氧化过程中,氧化动力学曲线为直线,较未预处理试样氧化增重显著减少;连续升温氧化过程中,和未预处理试样相比,剧烈氧化开始温度升高,同时其氧化速率及最终的氧化增重均大幅度降低.说明了高温预氧化处理能够有效提高SiC陶瓷的抗氧化性能.
等温氧化
非等温氧化
SiC ceramic
isothermal oxidation
non-isothermal oxidation
Abstract
SiC ceramic was prepared by hot-pressing method with Si as an additive.XRD,SEM,isothermal oxidation-weight gain and non-isothermal oxidation (TG) were used to study the oxidation properties of SiC.The results show that the kinetics of isothermal oxidation without pre-oxidation SiC obey a parabolic rule at 600-1 100 ℃,and the oxidation speed of SiC increased at first and then decrease with temperature increasing at 1 100-1 300 ℃.After pre-oxidation process,the kinetics of isothermal oxidation of SiC obey a linear rule in the whole experimental temperature range.The sample has a higher severe oxidation temperature than the origin sample in the non-isothermal condition.The weight gain of SiC after pre-oxidation is less than that of the origin sample remarkably.The pre-oxidation process is a useful method to improve the oxidation resistance of SiC ceramic.
中图分类号 TB321
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收稿日期 2006/11/27
修改稿日期 2007/2/8
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备注唐汉玲(1978-),女,江西南昌人,博士研究生.
引用该论文: TANG Han-ling,ZENG Xie-rong,XIONG Xin-bo,LI Long,ZOU Ji-zhao. Oxidation Resistance Analysis of Silicon Carbide Sintered by Hot-pressing[J]. Materials for mechancial engineering, 2007, 31(9): 11～14
唐汉玲,曾燮榕,熊信柏,李龙,邹继兆. 热压烧结碳化硅陶瓷的氧化性能[J]. 机械工程材料, 2007, 31(9): 11～14
被引情况:
【1】姚振华,熊惟皓,叶大萌,瞿峻, "Ti(C,N)基金属陶瓷在900~1150℃的氧化行为",机械工程材料 34, 1-4(2010)
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参考文献
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【3】廖陆林,谭寿洪,江东亮.以Al-B4C-C为烧结助剂的SiC陶瓷液相烧结研究[J].无机材料学报,2002,17(2):265-270.
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【8】林仕伟,司文捷,彭志坚,等.硅基陶瓷材料高温氧化理论的回顾[J].材料科学与工程,2002,20(2):268-272.
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