放电等离子烧结工艺制备致密碳化硅陶瓷
Densification Process of Spark Plasma Sintering for Silicon Carbide Ceramic
摘 要
以SiC微粉为原料,并添加质量分数为10%的Al2O3和Y2O3为烧结助剂,采用放电等离子烧结(SPS)技术快速制备了SiC陶瓷,对烧结致密化过程、SPS烧结温度、烧结压力及烧结时间对致密化的影响进行了研究,并通过XRD和SEM等检测手段对SPS烧结得到烧结体的显微组织和物相组成进行了分析.结果表明：SiC的SPS烧结过程可分为放气膨胀区、气体溢出收缩区、烧结收缩区、烧结完成区四阶段,最佳的烧结参数为1 600℃,50 MPa,5 min,所得的烧结体致密度达99.09%.
放电等离子烧结
致密度
silicon carbide ceramic
spark plasma sintering(SPS)
densification
Abstract
The silicon carbide ceramic with submicron silicon carbide powder as raw matevials and 10%Al2O3 and Y2O3 additions was fabricated by spark plasma sintering (SPS).The densification process was analyzed and effects of temperature,pressure and time on densification were investigated.The Microstructure and phase transformation were observed by XRD and SEM.The results show that sintering process could be separated into deflation swelling zone,gas overflow zone,sintering shrinkage zone and sintering accomplishing zone.The optimal relative density of 99.09% could be achieved at 1 600℃,50 MPa,for holding 5 min.
中图分类号 TB383
所属栏目
基金项目 国家自然科学基金资助项目(50404012)
收稿日期 2007/4/29
修改稿日期 2007/7/20
网络出版日期
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备注张勇(1977-),男,河北邯郸人,博士研究生.
引用该论文: ZHANG Yong,HE Xin-bo,QU Xuan-hui,KONG Xiang-lei,DUAN Bo-hua. Densification Process of Spark Plasma Sintering for Silicon Carbide Ceramic[J]. Materials for mechancial engineering, 2008, 32(3): 45～47
张勇,何新波,曲选辉,孔祥磊,段柏华. 放电等离子烧结工艺制备致密碳化硅陶瓷[J]. 机械工程材料, 2008, 32(3): 45～47
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参考文献
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【2】Jensen R J,Luecke W E,Padture N P.High temperature properties of liquid phase sintered α-SiC[J].Materials Science and Engineering A,2000,282(12):109-114.
【3】Magnani G,Minoccari G L,PilottiL.Flexural strength and toughness of liquid phase sintered silicon carbide[J].Ceramics International,2000,26(5):495-500.
【4】She J H,Ueno K.Effect of additive content on liquid-phase sintering on silicon carbide ceramics[J].Mater Res Bull,1999,34(10/11):1629-1636.
【5】Tamari N,Tanaka T,Tanaka K,et al.Effect of spark plasma sintering on densification and mechanical properties of silicon carbide[J].Journal of Ceramic Society of Japan,1995,103(7):740-742.
【6】Francois G,Alexandre A.Densification of SiC by SPS-effects of time,temperature and pressure[J].Journal of the European Ceramic Society,2007,27(7):2725-2728.
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