B位替代对Bi2(Zn1/3Nb2/3)O7陶瓷介电性能的影响
Effect of B Site Substitution on Dielectric Properties of Bi2(Zn1/3Nb2/3)O7 Based Ceramics
摘 要
采用传统的二次球磨固相反应法制备了Bi2(Zn1/3Nb2/3-xMx)2O7(M为Sn,Zr,Ti)陶瓷,并使用X射线衍射仪、扫描电镜、介电性能测试仪等研究了Sn4+,Zr4+,Ti4+的B位替代对陶瓷烧结温度、物相、显微形貌以及介电性能的影响.结果表明:当替代量x≤0.25时,所得陶瓷均保持单一的单斜焦绿石相结构;Zr4+,Ti4+替代的陶瓷达到最致密的烧结温度与未经替代的一致,而Sn4+替代的陶瓷在1 020 ℃烧结才可以达到最致密;用Ti4+,Zr4+替代的陶瓷晶粒尺寸与基体的相当,而Sn4+替代的陶瓷晶粒尺寸大小不一;Sn4+,Zr4+替代的陶瓷介电常数温度系数随着替代量的增加逐渐减小,Sn4+替代的陶瓷在x=0.25时为负值,Ti4+替代的陶瓷介电常数温度系数随着替代量的增加先增大后减小,但始终为正值.
烧结温度
介电性能
Bi2O3-ZnO-Nb2O ceramics
sintering temperature
dielectric properties
Abstract
The Bi2(Zn1/3Nb2/3-xMx)2O7 (M was Sn,Zr,Ti) ceramics were prepared by traditional second solid phase reaction method. The effect of B site substitution of Sn4+,Ti4+,Zr4+ on the sintering temperature,microstructure and dielectric properties was investigated by means of XRD,SEM and dielectric property testing analyzer. The results show that the ceramic kept single monoclinic pyrochlore phase when Sn4+,Zr4+ and Ti4+ substitution content was no more than 0.25. The sintering temperature for the density ceramics substituted with Zr4+ and Ti4+ was both 1 000 ℃,but it was 1 020 ℃ for them substituted with Sn4+. The temperature coefficient of dielectric constant decreased gradually with the increase of substitution content of Sn4+,Zr4+. While it increased firstly and then decreased with the increase of substitution content,and its value was always positive.
中图分类号 TM28
所属栏目 材料性能及其应用
基金项目 四川省教育厅科技基金资助项目(2006C025)
收稿日期 2008/3/24
修改稿日期 2008/10/8
网络出版日期
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备注张红霞(1980-),女,河北邢台人,硕士研究生.
引用该论文: ZHANG Hong-xia,DING Shi-hua,CHEN Tao,SONG Tian-xiu,ZHANG Dong,YANG Xiu-ling. Effect of B Site Substitution on Dielectric Properties of Bi2(Zn1/3Nb2/3)O7 Based Ceramics[J]. Materials for mechancial engineering, 2009, 33(4): 82～84
张红霞,丁士华,陈涛,宋天秀,张东,杨秀玲. B位替代对Bi2(Zn1/3Nb2/3)O7陶瓷介电性能的影响[J]. 机械工程材料, 2009, 33(4): 82～84
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