Effect of Annealing Temperature on Crystallization Characteristics and Mechanical Properties of NiTi/Si Films
摘 要
采用射频磁控溅射法在NiTi膜表面沉积一层非晶硅膜而形成NiTi/Si膜,并对该膜进行了不同温度的退火处理;用XRD、SEM和纳米压痕仪研究了退火温度对NiTi/Si膜的结晶特性和力学性能的影响.结果表明:NiTi/Si膜在600 ℃下退火后其中的硅仍为非晶态;当退火温度在650 ℃后开始出现明显的结晶硅衍射峰,且随着温度升高,硅的结晶度增大,晶粒逐渐长大;而该膜的硬度和抗压痕蠕变能力逐渐降低;该膜弹性模量在650 ℃退火后最大.
Abstract
The amorphous Si films were deposited on NiTi films by radio frequency magnetron sputtering,then annealed at different temperatures.The effect of annealing temperature on the crystallization characteristics and mechanical properties of the NiTi/Si films was studied by XRD,SEM and nano-hardness tester.The results indicate that the Si in the NiTi/Si fims remained amorphous after annealing at 600 ℃,and obvious crystal silicon diffraction peaks ocuured above 650 ℃.The crystallinity and grain size of Si increased,the hardness and indentation creep resistance of the films decreased with increasing annealing temperature.The maximum elastic modulus could be obtained after annealing at 650 ℃.
中图分类号 TN304.8
所属栏目 试验研究
基金项目 王玉雷(1984-),男,山东枣庄人,硕士研究生.
收稿日期 2009/7/19
修改稿日期 2010/4/7
网络出版日期
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引用该论文: WANG Yu-lei,LI Zi-quan,LIU Jin-song. Effect of Annealing Temperature on Crystallization Characteristics and Mechanical Properties of NiTi/Si Films[J]. Materials for mechancial engineering, 2010, 34(9): 20~22
王玉雷,李子全,刘劲松. 退火温度对NiTi/Si膜结晶特性及力学性能的影响[J]. 机械工程材料, 2010, 34(9): 20~22
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参考文献
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【5】RUSSEL S W,LI J,MAYER J W.In situ observation of fractal growth during a-Si crystallization in a Cu3Si matrix[J].J Appl Phys,1991,70(9):5153-5155.
【6】HIROSHI K,TOMOHISA A,ATSUSHI K,et al.400 ℃ formation of poly-SiGe on SiO2 by Au-induced lateral crystallization[J].Materials Science in Semiconductor Processing,2005,8:79-82.
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【12】JIN Z H,GURURAJ A B,MILTON Y,et al.Nickel induced crystallization of amorphous silicon thin films[J].J Appl Phys,1998,84(1):194-199.
【13】高阳,文胜平,王晓慧,等.纳米压痕法测试压痕蠕变的应用研究[J].航空材料学报,2006,26(3):148-151.
【14】王飞,徐可为.晶粒尺寸与保载载荷对Cu膜纳米压入蠕变性能的影响[J].金属学报,2004,40(10):1032-1036.
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