XRD ANALYSIS OF ZnO THIN FILMS PREPARED BY RF MAGNETRON SPUTTERING
摘 要
采用RF磁控溅射法,在玻璃衬底上制备多晶ZnO薄膜,并对所制备的ZnO薄膜在空气气氛中进行了不同温度(350~600℃)的退火处理和600℃时N2气氛中的退火处理。利用X射线衍射分析了溅射参数如溅射功率、溅射氧分压、衬底温度以及退火处理对ZnO薄膜结晶性能的影响。结果表明,合适的衬底温度和退火处理能够提高ZnO薄膜的结晶质量。
Abstract
Polycrystalline ZnO films were deposited on glass substrates by radio frequency (RF) magnetron sputtering technique. The as-deposited films were annealed at various temperatures (350~600℃) in air and at 600℃ in N2. The influence of sputtering parameters such as sputtering power, O2 partial pressure, substrate temperature and annealing on the crystallization of the ZnO films was investigated by X-ray diffraction (XRD). The results show that the crystallization of the film has been promoted by desirable substrate temperature or annealing.
中图分类号 TG115.23
所属栏目
基金项目 合肥工业大学中青年科技创新群体专项资助(103-037016)
收稿日期 2005/9/19
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备注汪冬梅(1968-),女,工程师、硕士。
引用该论文: WANG Dong-mei,LU Jun,CHEN Chang-qi,WU Yu-cheng,ZHENG Zhi-xiang. XRD ANALYSIS OF ZnO THIN FILMS PREPARED BY RF MAGNETRON SPUTTERING[J]. Physical Testing and Chemical Analysis part A:Physical Testing, 2006, 42(1): 19~22
汪冬梅,吕珺,陈长奇,吴玉程,郑治祥. RF磁控溅射法制备ZnO薄膜的XRD分析[J]. 理化检验-物理分册, 2006, 42(1): 19~22
被引情况:
【1】隋明晓,曹文田,王书运,任 伟, "射频磁控溅射法制备碲化铅薄膜的X射线衍射分析",理化检验-物理分册 46, 288-291(2010)
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参考文献
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【16】倪星元.平面磁控溅射氧化锌薄膜的几个问题[J].硅酸盐通报, 1996,5: 15-17.
【2】Paraguay F D, Miki-Yoshida M U, Morales J. Influence of Al, In, Cu, Fe and Sn Dopants on the Response of Thin Film ZnO Gas Sensor to Ethanol Vapor[J]. Thin Solid Films, 2000,373: 137-140.
【3】Hong H K, Shin H W, Park H S, et al. Gas Identification Using Micro Gas Sensor Array and Neural-network Pattern Recognition[J]. Sensors and Actuators B, 1996,33: 68-71.
【4】Kadot M, Miura T, Minakat M, et al. Piezoelectric and Optical Properties of ZnO Films Deposited by an Electron–cyclotron-resonance Sputtering System[J]. Journal of Crystal Growth, 2002,237-239: 523-527.
【5】Lee J l, Kang K H, Kim S K, et al. RF Sputter Deposition of the High-quality Intrinsic and n-type ZnO Window Layers for Cu (In,Ga) Se2-based Solar Cell Applications[J]. Solar Energy Materials & Solar Cells, 2000,64: 185-195.
【6】Seeber W T, Abou-Helal M O, Barth S, et al. Transparent Semiconducting ZnO: Al Thin Films Prepared by Spray Pyrolysis[J]. Materials Science in Semiconductor Processing, 1999,2: 45-55.
【7】Kim H W, Kim N H. Preparation of GaN Films on ZnO Buffer Layers by RF Magnetron Sputtering[J]. Applied Surface Science, 2004,236: 192-197.
【8】贺红波,范正修,姚振钰,等.GaN蓝光材料新型ZnO/Si外延衬底的溅射沉积[J].中国科学(E辑), 2000,30(2): 127-131.
【9】Chakrabarti S, Ganguli D, Chaudhuri S. Substrate Dependence of Preferred Orientation in Sol-gel-derived Zinc Oxide Films[J]. Materials Letters, 2004,58: 3952-3957.
【10】马 艳,杜国同,杨天鹏,等.MOCVD法生长ZnO薄膜的结构及光学特性[J].发光学报, 2004,25(3): 305-307.
【11】Lokhande B J, Patil P S, Uplane M D. Studies on Structural, Optical and Electrical Properties of Boron Doped Zinc Oxide Films Prepared by Spray Pyrolysis Technique[J]. Physica B, 2001,302-303: 59-63.
【12】梁红伟,吕有明,申德振,等.利用P-MBE方法在(400)Si衬底上生长ZnO薄膜[J].发光学报, 2003,24(3): 275-278.
【13】Kim H, Pique A, Horwitz J S, et al. Effect of Aluminum Doping on Zinc Oxide Thin Films Grown by Pulsed Laser Deposition for Organic Light-emitting Devices[J]. Thin Solid Films, 2000,377-378: 798-802.
【14】Gong H, Wang Y, Yan Z, et al. The Effect of Deposition Conditions on Structure Properties of Radio Frequency Reactive Sputtered Polycrystalline ZnO Films[J]. Materials Science in Semiconductor Processing, 2002,5: 31-34.
【15】Lee J, Li Z, Hodgson M, et al. Structural, Electrical and Transparent Properties of ZnO Thin Films Prepared by Magnetron Sputtering[J]. Current Applied Physics, 2004,4: 398-401.
【16】倪星元.平面磁控溅射氧化锌薄膜的几个问题[J].硅酸盐通报, 1996,5: 15-17.
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