退火处理对溶胶-凝胶法制备AZO薄膜性能的影响
INFLUENCE OF ANNEALING ON PROPERTIES OF AZO THIN FILMS PREPARED BY SOL-GEL METHOD
摘 要
采用溶胶-凝胶旋涂法在普通载玻片衬底上制备出Al3+掺杂ZnO(AZO)薄膜。对所制备的薄膜在空气气氛中进行了不同温度(400~600℃)的退火处理,并在500℃下的不同气氛(氢气和氩气)中进行退火处理。利用XRD和SEM等分析手段对薄膜进行了表征,测定了薄膜的透光性。研究表明,随空气中退火温度的提高,ZnO薄膜(002)衍射峰强度得到增强,半高宽逐渐减小,透射率从85%提高到95%。薄膜晶粒尺寸范围为23.50~29.80nm;在氢气和氩气气氛下退火得到的薄膜性能均优于在空气中退火得到的薄膜性能。
AZO薄膜
退火处理
Sol-Gel
AZO film
Annealing
Abstract
The A13+ doped ZnO thin films were prepared on glass substrates by Sol-Gel Spinning method. The as-grown films were annealed at various temperatures (400℃-600℃) in air and different atmospheres (Air,H2 and Ar ) at 500℃. Thin films were characterized using scanning electron microscopy and X-ray diffraction. Their transmittances were measured. The results show that with increasing annealing temperature in air,the intensity of (002) diffraction peak becomes stronger and the full width at half the maximum (FWHM) of the (002) diffraction peak decreases gradually. The transmittance is improved. The range of grain size is from 23.50nm to 34.55nm. The property of films prepared in H2 or Ar is better than that in air.
中图分类号 TB43 O484.4
所属栏目 试验与研究
基金项目 合肥工业大学中青年科技创新群体专项资助(103-037016)
收稿日期 2006/8/9
修改稿日期
网络出版日期
作者单位点击查看
备注陈雯雯(1982-),女,硕士研究生。
引用该论文: CHEN Wen-wen,LV Jun,WANG Jian-min,TANG Wen-ming,LIU Jun-wu,WU Yu-cheng,ZHENG Zhi-xiang. INFLUENCE OF ANNEALING ON PROPERTIES OF AZO THIN FILMS PREPARED BY SOL-GEL METHOD[J]. Physical Testing and Chemical Analysis part A:Physical Testing, 2007, 43(2): 55～58
陈雯雯,吕 珺,王建民,汤文明,刘君武,吴玉程,郑治祥. 退火处理对溶胶-凝胶法制备AZO薄膜性能的影响[J]. 理化检验－物理分册, 2007, 43(2): 55～58
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参考文献
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【2】Chang J F. The effect of deposition temperature on the properties of Al-doped zinc oxide thin films［J］. Thin Solid Films,2000,386:79-86．
【3】Loffler J,Groenen R,Linden J L,et al. Amorphous silicon solar cells on natively ZnO grown by PECVD［J］. Thin Solid Films,2001,392:315-319．
【4】葛水兵,程珊华,宁兆元,等.ZnO∶Al透明导电膜的制备及其性能研究［J］.薄膜科学与技术,2000,11(3):77-80．
【5】Chen Yefan. Growth of ZnO single crystal thin films on c-plane (0001) sapphire by plasma enhanced molecular beam epitaxy［J］. J Cryst Growth,1997,181:165-169．
【6】Nunes P. Influence of the post-treatment on the properties of ZnO thin film［J］. Thin Solid Films,2001,383:277-280．
【7】Studenikin S A. Fabrication of green and orange photoluminescent undoped ZnO films using spray pyrolysis［J］. J Appl Phys,1998,84(4):2287-2294．
【8】Yousfi E B. Atomic layer deposition of zinc oxide and indium sulfide layers for Cu(In,Ga)Se2 thin-film solar cells［J］. Thin Solid Films,2001,387:29-32．
【9】姜海青,王连星,赵世民,等.溶胶-凝胶法制备Al3+离子掺杂型ZnO薄膜与评价［J］.功能材料,2000,31(3):278-280．
【10】Schuler T,Aegerter M A. Optical,electrical and structural properties of sol-gel ZnO∶Al coating［J］. Thin Solid Films,1999,351:125-131．
【11】Natsume Y,Sakata H. Zinc oxide films prepared by sol-gel spin-coating［J］. Thin Solid Films,2000,372:30-36．
【12】Ohyama M. Sol-gel preparation of ZnO films with extremely preferred orientation along (002) plane from zinc acetate solution［J］. Thin Solid Film,1997,306:78-85．
【13】Chakrabarti S,Ganguli D,Chaudhuri S. Substrate dependence of preferred orientation in sol-gel derived zinc oxide films［J］. Materials letters,2004,58:3952-3957．
【14】吕建国,叶志镇,黄靖云,等.退火处理对ZnO薄膜结晶性能的影响［J］.半导体学报,2003,24(7):729-736．
【15】Fang G J,Li D J,Yao B L. Fabrication and vacuum annealing of transparent conductive AZO thin films prepared by DC magnetron sputtering［J］. Vacuum,2003,68:363-372．
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