Combined Hot Pressing Sintering Technology for SiC Ceramic with High Density and Complex Shape
摘 要
提出了一种组合热压烧结新工艺, 以石墨为型芯材料成功制备出具有复杂内部型腔的SiC陶瓷。结果表明: 当石墨和SiC浆料固相含量均为50%(体积分数)时, 烧结后SiC陶瓷的密度最高且与石墨的径向收缩率差值最小; 石墨型芯易于去除, 得到的SiC陶瓷内部型腔平滑且完整, 相对密度高达98.5%, 抗弯强度达到580 MPa。
Abstract
A novel combined hot pressing sintering technology was proposed, and the SiC ceramic with complex inner cavity was prepared successfully by using graphite as the mold core material. The results show that when the solid content of both SiC and graphite slurries was 50vol%, the density of SiC ceramic after sintering was the highest and the radial shrinkage ratio difference between SiC and graphite was minimum. The graphite mold core can be removed easily and the inner cavity of the obtained SiC ceramic was smooth and complete. The relative density of SiC ceramic was 98.5% and flexural strength was 580 MPa.
中图分类号 TQ174 DOI 10.11973/jxgccl201604005
所属栏目 新材料 新工艺
基金项目 国家科技重大专项资助项目(2013ZX02104)
收稿日期 2015/10/15
修改稿日期 2016/2/16
网络出版日期
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备注刘秀(1988-), 男, 山东莱芜人, 博士研究生。
引用该论文: LIU Xiu,QI Long-hao,HE Zhi-yong,ZHANG Qi-fu. Combined Hot Pressing Sintering Technology for SiC Ceramic with High Density and Complex Shape[J]. Materials for mechancial engineering, 2016, 40(4): 18~20
刘秀,齐龙浩,贺智勇,张启富. 高致密度、复杂形状SiC陶瓷的组合热压烧结技术[J]. 机械工程材料, 2016, 40(4): 18~20
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参考文献
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【2】SCITI D,SILVESTRONI L,BALBO A,et al.High-strength and -toughness electroconductive SiC-based composites[J].Advanced Engineering Materials,2006,8(10): 997-1001.
【3】SAUTI G,CAN A,MCLACHLAN D S,et al.The AC conductivity of liquid-phase-sintered silicon carbide[J].Journal of the American Ceramic Society,2007,90(8): 2446-2453.
【4】梁汉琴, 姚秀敏, 黄政仁, 等.碳化硅陶瓷液相烧结时的液相生成过程[J].机械工程材料, 2015, 39(2): 34-37.
【5】KIM Y W,CHUN Y S,NISHIMURA T,et al.High-temperature strength of silicon carbide ceramics sintered with rare-earth oxide and aluminum nitride[J].Acta Materialia,2007,55(2): 727-736.
【6】刘东旭, 翁端.柴油车尾气颗粒物净化用SiC过滤材料的研究与应用[J].环境工程学报, 2007, 1(5): 134-138.
【7】张剑寒, 张宇民, 韩杰才, 等.空间用碳化硅反射镜的设计制造与测试[J].光学精密工程, 2006, 14(2): 179-184.
【8】JENNY J R,MALTA D P,MULLER S G,et al.High-purity semi-insulating 4H-SiC for microwave device applications[J].Journal of Electronic Materials,2003,32(5): 432-436.
【9】MALINGE A,COUPE A,LE PETITCORPS YANN,et al.Pressureless sintering of beta silicon carbide nanoparticles[J].Journal of the European Ceramic Society,2012,32(16): 4393-4400.
【10】谢志鹏.结构陶瓷[M].北京: 清华大学出版社, 2011: 473-479.
【11】武安华, 曹文斌, 李江涛, 等.热压工艺对SiC陶瓷结构及性能的影响[J].粉末冶金技术, 2000, 19(6): 327-330.
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