Preparation and Characterization of Molten Multi-crystalline Silicon Ingot in Crucible Coated with Different Si3N4 Coatings
摘 要
以α-Si3N4和β-Si3N4粉为原料,采用免烧结工艺在坩埚内壁上分别制备了α-Si3N4涂层、β-Si3N4涂层以及二者质量比为1 ∶1的复合涂层,然后在这些涂层坩埚中制备得到了多晶硅铸锭,观察了涂层和硅锭的表面形貌,测试了硅锭的表面粗糙度、晶粒大小以及红区长度。结果表明:α-Si3N4涂层表面粗糙不平、起伏不均匀,对应硅锭的表面粗糙度和晶粒尺寸最大,红区最长;β-Si3N4涂层表面较平整且起伏均匀,对应硅锭的表面粗糙度最小,晶粒尺寸较小,红区最短;复合涂层的表面粗糙度介于上述二者之间,对应硅锭的晶粒尺寸最小,红区长度介于二者之间。
Abstract
With α-Si3N4 and β-Si3N4 powders as raw materials, the α-Si3N4coating, β-Si3N4 coating and composite coating of α-Si3N4 and β-Si3N4, whose mass ratio was 1:1, were prepared on the inner-wall of crucible by the non-sintering process, respectively, and then the multi-crystalline silicon ingots were obtained in the coated crucible. The surface morphology of the coatings and silicon ingots were observed and the surface roughness, grain size and length of red zone for silicon ingot were measured. The results show that the surface of α-Si3N4 coating was rough and undulating unevenly, and the surface roughness and grain size of the corresponding silicon ingot was the largest and the red zone was the longest. The surface of β-Si3N4 coating was relatively smooth and undulating evenly; the surface roughness of the corresponding silicon ingot was the smallest, the grain size was relatively small and the red zone was the shortest. The surface roughness degree of composite coating was between those of the above two coatings; the grain size of the corresponding silicon ingot was the smallest and the length of red zone was between the above two silicon ingots.
中图分类号 TM615 DOI 10.11973/jxgccl201705012
所属栏目 试验研究
基金项目 河南省科技发展计划项目(142102210428)
收稿日期 2016/4/5
修改稿日期 2017/1/18
网络出版日期
作者单位点击查看
备注李永乐(1987-),男,河南三门峡人,硕士研究生.
引用该论文: LI Yongle,HUANG Jinliang,LI Feilong,LI Qian,LI Lihua. Preparation and Characterization of Molten Multi-crystalline Silicon Ingot in Crucible Coated with Different Si3N4 Coatings[J]. Materials for mechancial engineering, 2017, 41(5): 59~62
李永乐,黄金亮,李飞龙,李谦,李丽华. 不同Si3N4相涂层坩埚中全熔多晶硅锭的制备及表征[J]. 机械工程材料, 2017, 41(5): 59~62
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【4】LI T F, YEH K M, HSU W C,et al. High-quality multi-crystalline silicon (mc-Si) grown by directional solidification using notched crucibles[J]. Journal of Crystal Growth, 2011, 318(1):219-223.
【5】申铣宪, 金延珉, 唐珊珊,等. 一种用于铸造高效多晶硅锭的方法:2013100086629[P].2013-04-03.
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【11】NAKAJIMA K, MORISHITA K, MURAI R,et al. Growth of high-quality multicrystalline Si ingots using non-contact crucible method[J]. Journal of Crystal Growth, 2012, 355:38-45.
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