采用扫描电镜（SEM）、能谱仪（EDS）分别在10 kV和20 kV加速电压下，对SiC/W扩散偶中钨元素的面分布和线分布进行了分析。结果表明：在10 kV加速电压下，钨元素只能激发出M线系，钨元素的M线系和硅元素的K线系发生重叠，从而导致材料中钨元素和硅元素在面分布和线分布下无法区分。将加速电压从10 kV提高至20 kV，通过激发钨元素的L线系，从而实现了钨元素的分布表征，使钨元素分布趋近于真实分布情况。能谱数据再处理也进一步验证了10 kV加速电压下钨元素分布紊乱是由钨元素的M线系和硅元素的K线系重叠引起的。

The surface-distribution and line-distribution of W element in SiC/W diffusion couple were analyzed under 10 kV and 20 kV accelerating voltage by using scanning electron microscope (SEM) and energy dispersive spectrometer (EDS). The results show that the overlap between the M spectrum series of W element and K spectrum series of Si element occurred in that there was only the M spectrum series of W inspired under 10 kV accelerating voltage. Obviously, it was the reason that it is difficult to distinguish between W and Si elements through surface-distribution and line-distribution in SiC/W diffusion couple. When the accelerating voltage was increased from 10 kV to 20 kV, the distribution of W element is characterized by inspired the L spectrum series of W element, which made the distribution of W element close to the real distribution. The EDS data further confirmed that the disordered distribution of the W element under the 10 kV accelerated voltage was caused by the overlap between the M spectrum series of W element and the K spectrum series of Si element.