富氧气氛烧结对SnO2压敏电阻微观结构与电学性能的影响
Effect of Oxygen-enriched Atmosphere Sintering on Microstructure and Electrical Properties of SnO2 Varistors
摘 要
分别在空气气氛和富氧气氛（氧气体积分数分别为30%，40%，50%）下烧结制备SnO2压敏电阻，研究了烧结气氛中氧气含量对SnO2压敏电阻微观结构和电学性能的影响。结果表明：与空气气氛相比，在富氧气氛中烧结的压敏电阻的物相组成与晶粒尺寸相近，气孔更少，致密性更好；随着富氧气氛中氧气含量的增多，压敏电阻的电学性能提高，尤其在氧气体积分数为50%时，压敏电阻的非线性系数提高了46.9%，电压梯度提高了45.9%，泄漏电流降低了30.0%。
电学性能
微观结构
陶瓷
varistor
electrical property
microstructure
ceramic
Abstract
SnO2 varistors were sintered in air atmosphere and oxygen-enriched atmosphere (oxygen volume fractions of 30%, 40%, and 50%, respectively), and the effects of oxygen content in sintering atmosphere on microstructure and electrical properties of SnO2 varistors were studied. The results show that the phase composition and grain size of the varistor sintered in the oxygen-riched atmosphere were similar to those sintered in the air atmosphere, and the varistor had fewer pores and better compactness. With increasing oxygen content in the oxygen-riched atmosphere, the electrical performance of the varistor increased, especially when the oxygen volume fraction was 50%, the nonlinear coefficient of the varistor increased by 46.9%, the voltage gradient increased by 45.9%, and leakage current was reduced by 30.0%.
中图分类号 TN384 TM28 DOI 10.11973/jxgccl202210007
所属栏目 试验研究
基金项目 国家自然科学基金资助项目（51762038）
收稿日期 2021/7/15
修改稿日期 2022/7/8
网络出版日期
作者单位点击查看
备注孙冠岳(1994-),男,山东德州人,硕士研究生
引用该论文: SUN Guanyue,ZHAO Hongfeng,LIU Dongji,ZHOU Yuanxiang,XIE Qingyun. Effect of Oxygen-enriched Atmosphere Sintering on Microstructure and Electrical Properties of SnO2 Varistors[J]. Materials for mechancial engineering, 2022, 46(10): 39～43
孙冠岳,赵洪峰,刘冬季,周远翔,谢清云. 富氧气氛烧结对SnO2压敏电阻微观结构与电学性能的影响[J]. 机械工程材料, 2022, 46(10): 39～43
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【2】HAMANO K, NAKAGAWA Z E, OKAMOTO Y, et al.Electrical properties and microstructure of ZnO-Nb2O5-MnO ceramics sintered in the liquid phase[M]//Ceramic Microstructures '86.Boston, MA:Springer, 1987:687-696.
【3】HE J L, HU J, MENG B W, et al.Requirement of ultra-high voltage GIS arrester to voltage gradient of metal-oxide varistor[J].Science in China Series E:Technological Sciences, 2009, 52(2):450-455.
【4】RAMÍREZ M A, FERNÁNDEZ J F, RUBIA M, et al.The influence of area/volume ratio on microstructure and non-Ohmic properties of SnO2-based varistor ceramic blocks[J].Journal of Materials Science:Materials in Electronics, 2009, 20(1):49-54.
【5】LU C H, CHYI N, WONG H W, et al.Effects of additives and secondary phases on the sintering behavior of zinc oxide-based varistors[J].Materials Chemistry and Physics, 2000, 62(2):164-168.
【6】NAHM C W, KIM H S.Effect of Pr6O11/CoO mole ratio on nonlinear properties and DC accelerated aging characteristics of ZnO-Pr6O11-CoO-Dy2O3-based varistors[J].Materials Letters, 2002, 56(4):379-385.
【7】ZHAO H F, LIANG W X, WANG F, et al.A low leakage current (Co, Mn, Ta)-SnO2 varistor tailored by doping with chromium for power grids[J].Results in Physics, 2020, 18:103314.
【8】DORRAJ M, ZAKARIA A, ABDOLLAHI Y, et al. Optimiza-tion of Bi2O3, TiO2, and Sb2O3 doped ZnO-based low-voltage varistor ceramic to maximize nonlinear electrical properties[J].The Scientific World Journal, 2014, 2014:741034.
【9】NAHM C W.Effect of dopant (Al, Nb, Bi, La) on varistor properties of ZnO-V2O5-MnO2-Co3O4-Dy2O3 ceramics[J].Ceramics International, 2010, 36(3):1109-1115.
【10】ALLES A B, BURDICK V L.The effect of liquid-phase sintering on the properties of Pr6O11-based ZnO varistors[J].Journal of Applied Physics, 1991, 70(11):6883-6890.
【11】MENG P F, LYU S L, HU J, et al.Tailoring low leakage current and high nonlinear coefficient of a Y-doped ZnO varistor by indium doping[J].Materials Letters, 2017, 188:77-79.
【12】LAO Y W, KUO S T, TUAN W H.Effect of powder bed on the microstructure and electrical properties of Bi2O3- and Sb2O3-doped ZnO[J].Journal of Materials Science:Materials in Electronics, 2009, 20(3):234-241.
【13】SANTOS M R C, BUENO P R, LONGO E, et al.Effect of oxidizing and reducing atmospheres on the electrical properties of dense SnO2-based varistors[J].Journal of the European Ceramic Society, 2001, 21(2):161-167.
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【15】PREIS W, SITTE W.Electrical properties of grain boundaries in interfacially controlled functional ceramics[J].Journal of Electroceramics, 2015, 34(2/3):185-206.
【16】MUKAE K, TSUDA K, NAGASAWA I.Capacitance-vs-voltage characteristics of ZnO varistors[J].Journal of Applied Physics, 1979, 50(6):4475-4476.
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【19】WURST J C, NELSON J A.Lineal intercept technique for measuring grain size in two-phase polycrystalline ceramics[J].Journal of the American Ceramic Society, 1972, 55(2):109.
【20】AGUILAR-MARTÍNEZ J A, PECH-CANUL M I, LEYVA-PORRAS C, et al.Effect of Co3O4 content and compaction pressure on the microstructure and electric properties of SnO2-Sb2O5-Cr2O3 varistor ceramics[J].Ceramics Interna-tional, 2013, 39(7):8237-8243.
【21】BERNIK S, MACEK S, AI B. Microstructural and Electrical Characteristics of Y2O3-Doped ZnO-Bi2O3-Based Varistor Ceramics[J]. Journal of the European Ceramic Society, 2001, 21(10-11):1875-1878.
【22】KIM S S, CHO H G, CHOI I S, et al.A study on the microstructure and surge characteristics of ZnO varistor for distribution arrester[C]//Proceedings of International Conference on Power System Technology, Kunming:IEEE, 2002:2212-2217.
【23】STUCKI F, GREUTER F.Key role of oxygen at zinc oxide varistor grain boundaries[J].Applied Physics Letters, 1990, 57(5):446-448.
【24】BUENO P R, LEITE E R, OLIVEIRA M M, et al.Role of oxygen at the grain boundary of metal oxide varistors:A potential barrier formation mechanism[J].Applied Physics Letters, 2001, 79(1):48-50.
【25】FAYAT J, CASTRO M S.Defect profile and microstructural development in SnO2-based varistors[J].Journal of the European Ceramic Society, 2003, 23(10):1585-1591.
【26】孟鹏飞, 胡军, 邬锦波, 等.氧化锌压敏电阻综合性能的多元掺杂综合调控[J].高电压技术, 2018, 44(1):241-247. MENG P F, HU J, WU J B, et al.Comprehensive performances of ZnO varistors tailored by multi-elements doping[J].High Voltage Engineering, 2018, 44(1):241-247.
【27】ISHIBE S, KATO T, TAKADA Y, et al. Improvement of ZnO element performance by reducing spinel particles[J]. IEEE Transactions on Power Delivery, 2008, 23(4):1972-1977.
【28】LIANG W X, ZHAO H F, FAN S H, et al.Improvement of voltage gradient and leakage current characteristics of Mn2O3 and In2O3 added SnO2-ZnO-Ta2O5 based varistor[J].Materials Science in Semiconductor Processing, 2021, 124:105582.
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